? 2011 ixys corporation, all rights reserved high-gain igbt IXGH30N60B4 v ces = 600v i c110 = 30a v ce(sat) 1.7v t fi(typ) = 88ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 10 a t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 24a, v ge = 15v, note 1 1.5 1.7 v t j = 125 c 1.5 v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 66 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 156 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 48 a (rbsoa) clamped inductive load @ v ces p c t c = 25c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds100245a(04/11) medium-speed pt trench igbt features z optimized for low conduction and switching losses z square rbsoa z international standard package advantages z high power density z low gate drive requirement applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed drives ? dc servo and robot drives z pfc circuits g = gate c = collector e = emitter tab = collector to-247 ad g c e tab preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXGH30N60B4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 24a , v ce = 10v, note 1 10 17 s c ie s 860 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 50 pf c res 29 pf q g 77 nc q ge i c = 24a , v ge = 15v, v ce = 0.5 ? v ces 9 nc q gc 33 nc t d(on) 21 ns t ri 34 ns e on 0.44 mj t d(off) 200 ns t fi 88 ns e of f 0.70 1.30 mj t d(on) 20 ns t ri 33 ns e on 0.75 mj t d(off) 228 ns t fi 223 ns e off 1.50 mj r thjc 0.66 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 24a , v ge = 15v v ce = 400v, r g = 10 note 2 inductive load, t j = 125c i c = 24a , v ge = 15v v ce = 400v, r g = 10 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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